Laboratórium technológií iónového zväzku

Kontakt: pavol.noga@stuba.sk

Range of applicable ion energies and species ranging from 40keV up to 50MeV for heavy ions and currents up to 2mA for low energy beams and 50μA for high energy beams. Ion sources enables to work with virtually all elements of the Periodic Table.

Technické vybavenie/zariadenia

• 6MV Tandetron Tandem Accelerator
  • experimental end-station for ion implantation (wafer size up to ∅100mm) with substrate temperature control (-195°C to 800°C)
  • end-station for Ion Beam Analysis covering RBS, PIXE and ERD (hydrogen depth profiling)
• 500kV Implanter
  • experimental end-station for ion implantation (up to ∅100mm) with substrate temperature control.
  • semi-automatic single wafer (up to ∅200mm) processing end-station.

Technológie

• surface/thin layer modification
• ion beam assisted material synthesis
• ion beam analysis (RBS/Channeling, PIXE, ERD)
• radiation damage studies

Servis/služby

• Ion implantation of substrates up to ∅200mm
• High energy ion implantation of substrates up to ∅100mm
• Analysis of thin layers and surfaces
• Radiation hardness testing
• Consulting services in the field of ion beam applications